Gate-Voltage Control of Oxygen Diffusion on Graphene

Conductivity of a graphene strip: Width and gate-voltage dependencies

Robustness improvement of high-voltage IGBT by gate control

This paper considers the turn-off robustness (the maximal current being able to be turned off) of high power IGBTs under over current condition. The analysis of turn-off curves shows that the turn-off robustness of the investigated devices is not really limited by the rate of voltage rise on collector-emitter (dVCE / dt ). The main reason of the robustness limitation is found out to be the rate...

Gate Length Scaling and Threshold Voltage Control of Double-Gate MOSFETs

Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...

Bias voltage control of magnetic phase transitions in graphene nanojunctions.

The magnetic state of a spintronic device is usually controlled by magnetic contacts or a transverse electric field generated by side gates. In this work, we consider a graphene nanojunction in the presence of a bias voltage that leads to magnetic phase transitions in the system. Combining the non-equilibrium Green’s function with the Hubbard model, our self consistent calculation reveals that ...

Conductivity of suspended and non-suspended graphene at finite gate voltage

We compute the DC and the optical conductivity of graphene for finite values of the chemical potential by taking into account the effect of disorder, due to mid-gap states (unitary scatterers) and charged impurities, and the effect of both optical and acoustic phonons. The disorder due to mid-gap states is treated in the coherent potential approximation (CPA, a self-consistent approach based on...